Sub-THz Semicondutor Imaging Camera

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Sub-THz Semicondutor Imaging Camera

Sub-THz Semicondutor Imaging Camera
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THz imaging camera specificationsn

Model Name Tera-256 Tera-1024 Tera-4096
Number of Pixels 256 (16 x 16) 1024 (32 x 32) 4096 (64 x 64)
Pixel Size 1.5 x 1.5 mm2 1.5 x 1.5mm2 1.5 x 1.5 mm2
Responsivity 50 kv/W 50 KV/W 50 kV/W
Noise Equivalent Power 1 nW/Hz0.5 1 nW/Hz0.5 1 nW/Hz0.5
Device Size 10 x 10 x 5.5cm 10 x 10 x 5.5cm 20 x 20 x 10cm
About Terasence
Terasense has a strong team of 20 skilled scientists and engineers. Most of them are young specialists with Ph.D. in the field of microwave and terahertz research representing young generation of RUssian physicists. Scientific result of the group have published in more than 300 papers in international peer-reviewed journals. The team is led by corresponding member of Russian Academy of Science Prof. lgor kukushkin, CEO

Product Description

Terasense has developed an orignal patent-protected technology for making a new type of semicondunductor detectors for sub-THz rays operating at room tempertaures. The dectors can be combined into a compact and rather inexpensive sensor array (similar to CCD/CMOS sensors in a photo camera). The company is developing imaging applications for THz and sub-THz frequency ranges based on its sensors.

The detectors proposed by Tesasense have good responsivity comparable with other available detectors working in sub-THz range (0.1-0.7 THz), but in contrast they are low-cost, has uniform pixel-to-pixel sensitivity (pixel-to-pixel deviation of the responsivity is less than 20%) and they can be easily produced in large quantities in the form of 2D array thanks to compatibility of the Terasense technology with mass semiconductor manufacturing lines. Therefore, the detectors are suitable for use in the sub-THz camera without any moving parts

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